Description

LEXAR NM620 2TB Internal SSD M.2 PCIe Gen 3×4 NVMe 2280

This LEXAR NM620 2TB internal SSD combines PCIe Gen 3×4 NVMe 1.4 protocol with high‑density 3D TLC NAND and LDPC error correction to deliver fast startup, large file transfers, and smooth performance for creative professionals, gamers, and advanced users. With sequential read speeds up to 3,300 MB/s and write speeds up to 3,000 MB/s, plus up to 350 K random read IOPS and 256 K write IOPS, the drive offers reliable endurance (1,000 TBW) and a five‑year warranty. Compact and energy efficient, it’s built for demanding workloads in laptops and desktops alike.

Product Features

High‑speed PCIe Gen 3×4 interface

Delivers sequential read speeds up to 3,300 MB/s and write speeds up to 3,000 MB/s for fast loading, rendering and file transfers.

NVMe 1.4 support with LDPC error correction

NVMe 1.4 protocol and low‑density parity check technology help maintain data integrity under heavy workloads and minimize errors.

High endurance and long warranty

Rated for up to 1,000 TBW with a five‑year limited warranty and MTBF of 1,500,000 hours — designed for long‑term use.

Shock and vibration resistant

With no moving parts, able to withstand up to 1,500 G shock (0.5 ms half sine wave) and vibration of 10–2,000 Hz at 20 G for enhanced durability.

Energy efficient, DRAM‑less design

Consumes less power and runs cooler than many alternatives, relying on host memory buffer (HMB) rather than onboard DRAM to reduce cost and power draw.

Compact M.2 2280 form factor

Standard M.2 2280 size (80 × 22 × 2.25 mm) and lightweight (~9 g), making it a versatile upgrade for both laptops and desktops.

Product Specifications

• Capacity: 2 TB
• Form factor: M.2 2280 (80 × 22 × 2.25 mm)
• Interface / protocol: PCIe Gen 3×4, NVMe 1.4
• Sequential read speed: up to 3,300 MB/s
• Sequential write speed: up to 3,000 MB/s
• Random read IOPS: up to 350,000
• Random write IOPS: up to 256,000
• NAND flash: 3D TLC NAND with LDPC error correction
• Controller: Innogrit IG5216 (Lexar branded)
• DRAM cache: DRAM‑less design with host memory buffer
• Total bytes written (TBW): 1,000 TB
• Drive Writes Per Day (DWPD): 0.44
• Mean time between failures (MTBF): 1,500,000 hours
• Operating temperature: 0 °C to 70 °C
• Storage temperature: –40 °C to 85 °C
• Shock resistance: 1,500 G (0.5 ms)
• Vibration resistance: 10–2,000 Hz, 1.5 mm, 20 G, 30 min/axis
• Weight: approximately 9 g
• Warranty: five‑year limited